NSS12501UW3T2G The NSS12501UW3T2G is an NPN transistor from On Semiconductor designed for low voltage, high speed switching applications. It features a 12V collector-emitter voltage and 5A continuous current capability.
Mfr Part #:

NSS12501UW3T2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSS12501UW3T2G is an NPN transistor from On Semiconductor designed for low voltage, high speed switching applications. It features a 12V collector-emitter voltage and 5A continuous current capability.
Total Stock: 27,828 pcs
$ Price Range: $0.99

NSS12501UW3T2G Available from 1 distributor

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NSS12501UW3T2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA = 25 °C, Note 1)
Power Dissipation (Maximum @ TA = 25 °C, Note 2)
Supplier Device Package
Tape & Reel
Thermal Resistance Junction Ambient (Nominal @ Note 1)
Thermal Resistance Junction Ambient (Nominal @ Note 2)
Thermal Resistance, Junction-to-Lead #1
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSS12501UW3T2G Description

Short technical summary and product information.

The On Semiconductor NSS12501UW3T2G is a miniature surface mount NPN transistor from the e²PowerEdge family. It is designed for low voltage, high speed switching applications requiring efficient energy control. This device offers a low VCE(sat) and high current gain capability.

 

Key electrical specifications include a 12V collector-emitter voltage (VCEO), a continuous collector current (IC) of 5A, and a peak collector current (ICM) of 7A. The DC current gain (hFE) is a minimum of 200 at 2A and 2V, with a Vce saturation of a maximum of 120mV at 400mA and 4A. The operating frequency is rated at 150MHz.

 

Thermal characteristics include a total device dissipation of 875 mW at 25°C (TA) on FR-4 with 100 mm² copper traces, and 1.5W on FR-4 with 500 mm² copper traces. The junction-to-ambient thermal resistance is 143 °C/W (Note 1) and 85 °C/W (Note 2). The operating and storage temperature range is -55°C to +150°C.

 

This transistor is housed in a 3-WDFN exposed pad package, suitable for surface mounting. It is specified as Pb-Free and RoHS3 compliant.

NSS12501UW3T2G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Transistor, 12V, 5A
Subcategory: Bipolar (BJT) - Single

NSS12501UW3T2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSS12501UW3T2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSS12501UW3T2G Features

  • 12V collector-emitter voltage rating.
  • 5A continuous collector current capability.
  • High DC current gain of 200.
  • Low Vce saturation of 120mV.
  • Surface mount 3-WDFN package.

NSS12501UW3T2G Applications

  • Used in DC-DC converters.
  • Power management in portable products.
  • Low voltage motor controls.
  • Automotive air bag deployment.

NSS12501UW3T2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSS12501UW3T2G?

The maximum collector-emitter voltage (VCEO) for the NSS12501UW3T2G is 12 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the NSS12501UW3T2G is 5 A.

What is the operating temperature range?

The operating temperature range for this transistor is -55°C to +150°C.

What package type is the NSS12501UW3T2G supplied in?

The NSS12501UW3T2G is supplied in a 3-WDFN Exposed Pad package.

Is the NSS12501UW3T2G RoHS compliant?

Yes, the NSS12501UW3T2G is RoHS3 compliant.

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