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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 0807+ | On Request | On Request |
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| Forward Voltage (Typical/Maximum @ IF=10 mA) | |
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| Reverse Leakage (Maximum @ VR = 1 V) | |
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The NSR15TW1T2G from ON Semiconductor is a Triple RF Schottky Diode suitable for analog and digital applications, including DC-based signal detection and mixing. It offers low capacitance (<1 pF) and low forward voltage (390 mV typical @ 1 mA), contributing to reduced parasitic losses and accurate signal measurement.
Key electrical characteristics include a maximum reverse voltage of 15V and a maximum forward current of 30mA. The operating temperature range is -65°C to +150°C. The diode is available in a compact SC-88 package, suitable for surface mount applications.
This device is designed for applications requiring efficient signal detection and mixing. Its Schottky barrier construction ensures fast switching speeds and low forward voltage drop, making it ideal for various RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak reverse voltage is 15 V.
The maximum forward current is 30 mA.
The typical forward voltage at 1 mA is 390 mV.
The capacitance is 1 pF.
This diode is in an SC-88 package.