NSPM5131MUTBG TVS diode with 13.5V working peak reverse voltage, 21.5V clamping voltage, and 160A peak pulse current. Provides ±30kV ESD protection per IEC 61000-4-2. Surface mount in 6-UDFN package.
Mfr Part #:

NSPM5131MUTBG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
TVS diode with 13.5V working peak reverse voltage, 21.5V clamping voltage, and 160A peak pulse current. Provides ±30kV ESD protection per IEC 61000-4-2. Surface mount in 6-UDFN package.
Total Stock: 6,017 pcs
$ Price Range: $0.17 - $0.78

NSPM5131MUTBG Available from 1 distributor

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NSPM5131MUTBG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Applications
Breakdown Voltage (VBR) @ IT
Clamping Voltage (Vc) @ Ipp
Current
ESD Protection Level
Lead Spacing
Lead Style
Maximum Reverse Leakage Current (IR) @ VRWM
Medical Grade
Mounting Type
Operating Temperature
Peak Pulse Current (Ipp)
Power Line Protection
SVHC Present
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Tape and Reel
Type
Unidirectional Channels
Voltage
Working Peak Reverse Voltage (Vrwm)

NSPM5131MUTBG Description

Short technical summary and product information.

The NSPM5131MUTBG is a unidirectional TVS diode from On Semiconductor designed for ESD and transient voltage protection. It features a working peak reverse voltage of 13.5 V, a nominal breakdown voltage of 15.5 V, and a maximum clamping voltage of 21.5 V at 100 A peak pulse current (8/20 µs). The device can handle a peak pulse current of 160 A and provides ±30 kV contact discharge ESD protection per IEC 61000-4-2, making it suitable for high-voltage transient environments.

 

This diode is packaged in a 6-UFDFN exposed pad surface mount package (6-UDFN 1.8x2) and operates over a temperature range of -55°C to +125°C. It is Pb-Free and RoHS compliant. The device is typically used in general purpose circuit protection applications where a low clamping voltage and high surge capability are required.

NSPM5131MUTBG Quick Information

Product Type: TVS Diode
Canonical Name: NSPM5131MUTBG - TVS Diode, 13.5V Working Voltage, 160A Peak Pulse, 6-UDFN
Subcategory: ESD Protection Diode

NSPM5131MUTBG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NSPM5131MUTBG Estimated Pricing

Qty Low High
1+ $0.78 $0.78
10+ $0.49 $0.49
100+ $0.33 $0.33
500+ $0.26 $0.26
1,000+ $0.24 $0.24
3,000+ $0.20 $0.20
6,000+ $0.18 $0.18
9,000+ $0.18 $0.18
24,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSPM5131MUTBG Features

  • Unidirectional TVS diode for ESD protection.
  • Provides ±30kV ESD protection (IEC 61000-4-2).
  • Rated for 160A peak pulse current (8/20µs).
  • Low clamping voltage of 21.5V at 100A.
  • Surface mount in 6-UDFN (1.8x2) package.

NSPM5131MUTBG Applications

  • Protects sensitive electronics from ESD events.
  • Used in portable electronics and communication ports.
  • Ideal for general purpose circuit protection.
  • Suitable for high-speed data line protection.

NSPM5131MUTBG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the standoff voltage of the NSPM5131MUTBG?

The working peak reverse voltage (VRWM) is 13.5 V.

What is the breakdown voltage range?

The breakdown voltage (VBR) at 1 mA is 13.6 V minimum, 15.5 V nominal, and 17.5 V maximum.

What is the clamping voltage at peak pulse current?

The maximum clamping voltage is 21.5 V at 100 A peak pulse current (8/20 µs).

What is the peak pulse current rating?

The maximum peak pulse current (IPP) is 160 A for 8/20 µs waveform.

What package is the NSPM5131MUTBG available in?

It is supplied in a 6-UFDFN exposed pad surface mount package, also referred to as 6-UDFN (1.8x2).

What ESD protection level does this device provide?

It provides ±30 kV contact discharge ESD protection per IEC 61000-4-2.

What is the maximum reverse leakage current?

The maximum reverse leakage current is 1 µA at VRWM of 13.5 V.

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