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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
276,000 pcs
|
276000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| BFR Free | |
| Base Current | |
| Collector - Emitter Saturation Voltage | |
| Collector Current | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Continuous Drain Current | |
| DC Current Gain (Minimum @ VCE = 3.0 V, IC = 100 mA) | |
| DC Current Gain (Minimum @ VCE = 3.0 V, IC = 30 mA) | |
| DC Current Gain (Minimum @ VCE = 3.0 V, IC = 500 mA) | |
| Drain-to-Source Voltage | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Gate-to-Source Voltage | |
| Halogen Free | |
| Lead Spacing | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating Junction and Storage Temperature | |
| Pb-Free | |
| Pulsed Drain Current | |
| Source Current (Body Diode) | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Voltage |
The On Semiconductor NSM3005NZTAG is a versatile transistor combining a PNP BJT and an N-Channel MOSFET. It is rated for 30V collector-emitter voltage and 500mA collector current for the PNP BJT, and 20V drain-source voltage and 224mA continuous drain current for the N-Channel MOSFET.
This device is supplied in a 6-UDFN (1.6x1.6) surface mount package, making it suitable for space-constrained designs. It features Pb-Free, Halogen Free/BFR Free, and RoHS compliance.
Key electrical characteristics include a maximum collector-emitter saturation voltage of 0.4V for the PNP BJT and a thermal resistance of 245°C/W junction-to-ambient. The operating junction and storage temperature range is -55°C to 150°C.
This transistor is ideal for general purpose applications where a combination of PNP and N-Channel MOSFET functionality is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating for the PNP BJT is 30 V.
The drain-to-source voltage rating for the N-Channel MOSFET is 20 V.
The maximum continuous drain current at TA = 25°C is 224 mA.
The package type is 6-UDFN (1.6x1.6).
This component is ROHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.