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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,445 pcs
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4445 pcs | On Request | 1 | On Request | On Request | 0932+1122+ | On Request | On Request | |
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981 pcs
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981 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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981 pcs
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981 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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810 pcs
|
810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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718 pcs
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718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Total Device Dissipation (Maximum @ TA = 25 °C (Note 1) | |
| Total Device Dissipation (Maximum @ TA = 25 °C (Note 2) | |
| Total Device Dissipation (Single Pulse < 10 sec.) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor NSL12AWT1G is a PNP silicon transistor designed for battery-operated applications, offering high current capability and low VCE(sat). It can handle up to 2A continuous collector current and a peak current of 3A. The device has a maximum power dissipation of 450 mW at 25°C on a minimum pad, or 650 mW on a 1" pad.
This transistor operates within a junction and storage temperature range of -55°C to 150°C. It is housed in a compact SC-88/SC70-6/SOT-363 package, suitable for surface mounting. The typical DC current gain (hFE) is 100 at 800mA and 1.5V, with a Vce saturation of 290mV at 20mA and 1A.
Key electrical characteristics include a collector-emitter voltage of -12Vdc and a frequency response up to 100MHz. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, making it suitable for environmentally conscious designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NSL12AWT1G transistor has a collector-emitter voltage rating of -12 Vdc.
The NSL12AWT1G is available in the SC-88/SC70-6/SOT-363 package, which is suitable for surface mounting.
The operating temperature range for the NSL12AWT1G is -55°C to 150°C (TJ).
Yes, the NSL12AWT1G is RoHS3 compliant.