NSL12AWT1G The On Semiconductor NSL12AWT1G is a PNP bipolar junction transistor designed for battery-operated applications. It features high current capability and low VCE(sat).
Mfr Part #:

NSL12AWT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSL12AWT1G is a PNP bipolar junction transistor designed for battery-operated applications. It features high current capability and low VCE(sat).
Total Stock: 13,935 pcs
$ Price Range: $0.99

NSL12AWT1G Available from 6 distributors

Authorised
Non-Authorised

NSL12AWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Continuous
Collector Current - Peak
Collector Cutoff Current
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Total Device Dissipation (Maximum @ TA = 25 °C (Note 1)
Total Device Dissipation (Maximum @ TA = 25 °C (Note 2)
Total Device Dissipation (Single Pulse < 10 sec.)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSL12AWT1G Description

Short technical summary and product information.

The On Semiconductor NSL12AWT1G is a PNP silicon transistor designed for battery-operated applications, offering high current capability and low VCE(sat). It can handle up to 2A continuous collector current and a peak current of 3A. The device has a maximum power dissipation of 450 mW at 25°C on a minimum pad, or 650 mW on a 1" pad.

 

This transistor operates within a junction and storage temperature range of -55°C to 150°C. It is housed in a compact SC-88/SC70-6/SOT-363 package, suitable for surface mounting. The typical DC current gain (hFE) is 100 at 800mA and 1.5V, with a Vce saturation of 290mV at 20mA and 1A.

 

Key electrical characteristics include a collector-emitter voltage of -12Vdc and a frequency response up to 100MHz. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, making it suitable for environmentally conscious designs.

NSL12AWT1G Quick Information

Product Type: PNP Transistor
Canonical Name: PNP Silicon Low VCE(sat) Transistor
Subcategory: Bipolar (BJT) - Single

NSL12AWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSL12AWT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSL12AWT1G Features

  • High current capability up to 3 A.
  • Low VCE(sat) for efficiency.
  • Compact SC-88/SC70-6 package.
  • RoHS3, Pb-Free, Halogen Free compliant.
  • Wide operating temperature range.

NSL12AWT1G Applications

  • Used in switching power supplies
  • Suitable for amplification circuits
  • Ideal for compact electronic modules
  • Applicable in automotive control systems

NSL12AWT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the NSL12AWT1G transistor?

The NSL12AWT1G transistor has a collector-emitter voltage rating of -12 Vdc.

What package type is the NSL12AWT1G available in?

The NSL12AWT1G is available in the SC-88/SC70-6/SOT-363 package, which is suitable for surface mounting.

What is the operating temperature range for the NSL12AWT1G?

The operating temperature range for the NSL12AWT1G is -55°C to 150°C (TJ).

Is the NSL12AWT1G RoHS compliant?

Yes, the NSL12AWT1G is RoHS3 compliant.

Home
Account

Categories