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2,400 pcs
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2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NOVOSENSE NSI6602B-DSWR is a high-performance gate driver IC suitable for industrial applications. It features a wide operating supply voltage range, from a minimum of 2.7V to a maximum of 5.5V for VDDI, and up to 25V for VDDA/VDDB.
Key electrical characteristics include a peak output current of 4A sourcing and 6A sinking, a fast fall time of 6ns, and a maximum propagation delay of 25ns. The input logic level is compatible with 1.1V CMOS/TTL signals. The device is configured for half-bridge operation and supports IGBT and SiC MOSFET gate types.
Packaged in a SOIC-16-300MIL surface-mount package, the NSI6602B-DSWR operates within an industrial temperature range of -40°C to 125°C. This makes it a robust choice for demanding environments.
The NSI6602B-DSWR operates with a minimum supply voltage of 2.7V and a maximum of 5.5V for VDDI, and up to 25V for VDDA/VDDB.
The NSI6602B-DSWR gate driver can provide a peak output current of 4A for sourcing and 6A for sinking.
The fall time is 6ns and the rise time is 7ns for the NSI6602B-DSWR.
The NSI6602B-DSWR operates within an industrial temperature range of -40°C to 125°C.
The NSI6602B-DSWR is available in a SOIC-16-300MIL package.