| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48,000 pcs
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48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSBC144EDP6T5G from On Semiconductor is a dual NPN pre-biased transistor array designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces individual components, reducing system cost and board space.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It incorporates a 47kΩ resistor and offers a DC current gain (hFE) of 80 minimum at 5mA collector current and 10V Vce. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current.
This transistor array is housed in a compact SOT-963 surface mount package. It is rated for a power dissipation of 385mW at 25°C ambient temperature with both junctions heated. The device is Pb-Free and Halogen Free compliant.
This series is suitable for applications requiring simplified bias networks and reduced component count, contributing to more compact and cost-effective designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The integrated resistor has a value of 47kΩ.
The NSBC144EDP6T5G is supplied in a SOT-963 package.
Yes, the NSBC144EDP6T5G is RoHS3 Compliant.
The power dissipation is 385mW at 25°C ambient temperature with both junctions heated.