| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSBC143ZPDXV6T1G from On Semiconductor is a complementary bias resistor transistor (BRT) that integrates an NPN and a PNP transistor with monolithic bias resistors. This device is designed to replace a single transistor and its external bias network, reducing component count and board space.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The integrated resistors have nominal values of 4.7kΩ for R1 (base) and 47kΩ for R2 (base-emitter). The device offers a minimum DC current gain (hFE) of 80 at 5mA/10V and a saturation voltage (Vce) of 250mV at 1mA/10mA. The maximum power dissipation is 500mW.
This transistor array is supplied in a SOT-563 surface-mount package. It is Pb-free and Halogen-free, complying with RoHS standards. The design simplifies circuit implementation for various applications requiring integrated biasing.
The NSBC143ZPDXV6T1G is suitable for applications where component reduction and space saving are critical. Its pre-biased nature simplifies design and reduces the need for external components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The integrated resistors are 4.7kΩ for R1 and 47kΩ for R2.
It is supplied in a SOT-563 package.
Yes, the NSBC143ZPDXV6T1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
