| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,070 pcs
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51070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor NSBC143TPDXV6T1G is a pre-biased bipolar junction transistor (BJT) array designed for simplified circuit design. This device integrates two transistors, one NPN and one PNP, along with monolithic bias resistors, into a single SOT-563 package. It features a collector-emitter voltage rating of 50V and a continuous collector current of 100mA.
The transistor array includes a 4.7kΩ bias resistor and offers a DC current gain (hFE) of 160 minimum at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The device is suitable for surface mount applications.
This series of digital transistors is designed to replace a single device and its external resistor bias network, reducing system cost and board space. The NSBC143TPDXV6T1G is Pb-free and Halogen-free, complying with RoHS standards. It operates within a junction and storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 50Vdc.
The continuous collector current is 100mAdc.
This transistor array is supplied in a SOT-563 package.
The integrated bias resistor value is 4.7kΩ.
The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V collector-emitter voltage.
Yes, the NSBC143TPDXV6T1G is RoHS3 Compliant.
The junction and storage temperature range is -55°C to +150°C.