| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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96,000 pcs
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96000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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The On Semiconductor NSBC143TDXV6T5G is a dual NPN pre-biased transistor, part of a series designed to replace single transistors with integrated bias resistor networks. This integration reduces system cost and board space.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It has a typical DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV at 1mA and 10mA. The device incorporates a 4.7kΩ base resistor.
This transistor is housed in a SOT-563 surface-mount package, making it suitable for compact electronic designs. It operates within a junction and storage temperature range of -55°C to +150°C.
The NSBC143TDXV6T5G series is Pb-free and Halogen-free, complying with RoHS standards. It is also qualified for automotive applications with AEC-Q101 and PPAP capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The transistor is available in SOT-563 and SOT-666 packages.
Yes, this device is RoHS3 Compliant.
The integrated base resistor value is 4.7kΩ.
The junction and storage temperature range is -55 to +150 °C.