| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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80,000 pcs
|
80000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSBC143TDXV6T1G is a pre-biased NPN bipolar junction transistor manufactured by On Semiconductor. It features a collector-base voltage of 50V and a collector-emitter voltage of 50V, making it suitable for high-voltage switching and amplification applications. The transistor supports a maximum collector current of 100mA and has a DC current gain (hFE) of at least 160 at 5mA and 10V. Its input forward voltage is up to 30V, with a reverse voltage limit of 6V. The device is packaged in a SOT563 surface-mount package, suitable for compact electronic designs. It is designed for use in signal amplification, switching circuits, and other applications requiring high-voltage bipolar transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage is 50 Vdc.
The maximum collector current is 100 mAdc.
It is available in a SOT563 surface-mount package.