NSBC143EPDXV6T1G

The ON Semiconductor NSBC143EPDXV6T1G is a dual pre-biased bipolar transistor (BJT) array, integrating one NPN and one PNP transistor into a single package. This configuration simplifies circuit design by eliminating external bias resistors. It is designed to replace a single device and its associated bias network, reducing system cost and board space.

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device features a pre-bias resistor network with a nominal value of 4.7kΩ. The saturation voltage (Vce Sat) is a maximum of 250mV at 1mA collector current and 10mA base current, with a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V Vce.

This transistor array is housed in a compact SOT-563 surface-mount package, making it suitable for applications where space is limited. The device is rated for 500mW power dissipation at 25°C ambient temperature. It is Pb-free and Halogen-free, complying with RoHS standards.

The NSBC143EPDXV6T1G is ideal for digital logic circuits, switching applications, and general-purpose amplification where integrated biasing simplifies implementation. Its pre-biased nature allows for direct connection to logic-level inputs without external resistors, streamlining designs.