NSBC143EDP6T5G

The NSBC143EDP6T5G from On Semiconductor is a dual NPN pre-biased transistor, also known as a Bias Resistor Transistor (BRT). This integrated device replaces a single transistor and its external bias resistor network, simplifying circuit design and reducing component count and board space.

Key electrical specifications include a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It features a pre-bias resistor network with a nominal value of 4.7kΩ. The transistor exhibits a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V collector-emitter voltage, with a maximum Vce saturation of 250mV at 1mA base current and 10mA collector current. The device has a power dissipation rating of 339mW.

This component is housed in a SOT-963 surface mount package. It is designed to simplify circuit construction by integrating the bias resistors directly onto the chip. The use of BRTs can lead to significant cost savings and a smaller footprint in electronic designs.

This series of digital transistors is suitable for applications where circuit simplification and space reduction are critical. The AEC-Q101 qualified prefix (S and NSV) is available for automotive and other applications requiring unique site and control change requirements.