NSBC124EPDP6T5G

The ON Semiconductor NSBC124EPDP6T5G is a complementary bias resistor transistor (BRT) array featuring both NPN and PNP transistors with integrated monolithic bias networks. This design replaces individual transistors and external resistors, reducing component count and board space. It operates with a collector-emitter voltage of up to 50V and a continuous collector current of 100mA.

The device includes two resistors, each with a nominal value of 22kΩ, simplifying circuit design. The Vce saturation is a maximum of 250mV at 300µA/10mA, and the DC current gain (hFE) is a minimum of 60 at 5mA/10V. The total power dissipation is rated at 250mW.

Packaged in a compact SOT-963 surface-mount case, the NSBC124EPDP6T5G is suitable for space-constrained applications. It is Pb-free and halogen-free, complying with RoHS standards. This series is also available with S and NSV prefixes for automotive and other applications requiring AEC-Q101 qualification and PPAP capability.

This transistor array is ideal for applications where circuit simplification and reduced component count are desired. Its integrated bias resistors eliminate the need for external components, leading to cost savings and improved reliability.