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90,000 pcs
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90000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSBC124EMXWTBG from On Semiconductor is a single, pre-biased NPN bipolar junction transistor (BJT) designed for various electronic applications. This component features integrated resistors R1 and R2, each with a value of 22 kOhms, simplifying circuit design.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. The device has a power dissipation rating of 450mW. Its DC current gain (hFE) is a minimum of 60 at 5mA and 10V.
The transistor is housed in a 3-XFDFN surface mount package, with a standard package configuration of 3-XDFNW 1x1. This packaging is suitable for automated assembly processes.
This BRT is part of On Semiconductor's range of transistors, offering a convenient solution for applications requiring a pre-configured transistor with built-in biasing resistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NSBC124EMXWTBG is 50V.
The maximum collector current for the NSBC124EMXWTBG is 100mA.
The power dissipation rating for the NSBC124EMXWTBG is 450mW.
The NSBC124EMXWTBG is an NPN transistor.
The NSBC124EMXWTBG has integrated resistors R1 and R2, each with a value of 22 kOhms.
The NSBC124EMXWTBG is supplied in a 3-XFDFN package.