| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,000 pcs
|
72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSBC124EF3T5G from On Semiconductor is a digital transistor (BRT) featuring an integrated monolithic bias resistor network. This NPN transistor is designed to simplify circuit design by replacing discrete resistors and a single transistor, thereby reducing component count and board space.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It incorporates two resistors, R1 and R2, each with a nominal value of 22 kΩ. The device offers a minimum DC current gain (hFE) of 60 at 5mA and 10V, with a saturation voltage (Vce Sat) of 250mV maximum at 300µA base current and 10mA collector current.
This component is supplied in a SOT-1123 surface mount package, suitable for automated assembly processes. The device is RoHS compliant and Pb-free, aligning with modern environmental standards for electronic components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The device has integrated resistors R1 and R2, each with a nominal value of 22 kOhms.
The minimum DC current gain (hFE) is 60 at 5mA collector current and 10V collector-emitter voltage.
The NSBC124EF3T5G is supplied in a SOT-1123 package.
Yes, the NSBC124EF3T5G is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1.