NSBC124EDXV6T1G The NSBC124EDXV6T1G from ON Semiconductor is a dual NPN pre-biased transistor array. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBC124EDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSBC124EDXV6T1G from ON Semiconductor is a dual NPN pre-biased transistor array. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 120,000 pcs
$ Price Range: $0.99

NSBC124EDXV6T1G Available from 1 distributor

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NSBC124EDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBC124EDXV6T1G Description

Short technical summary and product information.

The ON Semiconductor NSBC124EDXV6T1G is a dual NPN pre-biased transistor array designed to simplify circuit design by integrating a transistor with its bias network into a single component. This device is housed in a compact SOT-563 surface-mount package, reducing board space and component count.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It features an integrated bias resistor network with a nominal resistance of 22kΩ. The transistor type is 2 NPN - Pre-Biased, offering a DC current gain (hFE) of 60 minimum at 5mA collector current and 10V Vce. The saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current.

 

This series is designed to replace single devices and external resistor bias networks, contributing to reduced system cost and improved board layout. The device is Pb-Free and Halogen Free, complying with RoHS standards. It is suitable for applications requiring simplified circuitry and reduced component count.

NSBC124EDXV6T1G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased Transistor Array

NSBC124EDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC124EDXV6T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC124EDXV6T1G Features

  • Dual NPN pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 22kΩ bias resistors.
  • Compact SOT-563 surface-mount package.

NSBC124EDXV6T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Replaces discrete transistors and bias resistors.
  • Suitable for digital logic level shifting.

NSBC124EDXV6T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSBC124EDXV6T1G?

The collector-emitter voltage (VCEO) for the NSBC124EDXV6T1G is 50 Vdc.

What is the continuous collector current of the NSBC124EDXV6T1G?

The continuous collector current (IC) for the NSBC124EDXV6T1G is 100 mAdc.

What is the package type for the NSBC124EDXV6T1G?

The NSBC124EDXV6T1G is available in SOT-563 and SOT-666 packages.

What is the mounting type for the NSBC124EDXV6T1G?

The NSBC124EDXV6T1G is a surface mount device.

What is the integrated resistance value in the NSBC124EDXV6T1G?

The NSBC124EDXV6T1G has integrated resistors with a value of 22 kΩ.

What is the DC current gain (hFE) of the NSBC124EDXV6T1G?

The DC current gain (hFE) is a minimum of 60 at 5mA collector current and 10V Vce.

What is the saturation voltage (Vce Sat) for the NSBC124EDXV6T1G?

The Vce saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current.

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