| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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152,000 pcs
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152000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSBC124EDP6T5G is a pre-biased bipolar junction transistor (BJT) array manufactured by On Semiconductor. It features a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current of 100mA. This component is designed for use in switching and amplification applications where reliable bipolar transistor performance is required.
The device comes in a SOT963 package, suitable for surface-mount assembly. Its pre-biased configuration simplifies circuit design by providing a ready-to-use transistor array, reducing the need for additional biasing components. Typical applications include signal switching, amplification, and driver circuits in various electronic systems.
This transistor array is part of the discrete semiconductor product category, specifically within the bipolar (BJT) arrays and pre-biased transistors series. It is suitable for use in compact, high-density electronic assemblies where space and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
The maximum collector current (IC) is 100 mAdc.