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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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159,500 pcs
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159500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| IC (Maximum) | |
| Input Forward Voltage | |
| Input Reverse Voltage | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| VCEO (Maximum) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSBC123TF3T5G is an NPN pre-biased transistor designed for simplified circuit design and reduced board space. It integrates a single transistor with a monolithic bias network consisting of two resistors.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. The device features a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV maximum at 1mA and 10mA. It also includes a nominal input forward voltage of 12 Vdc and an input reverse voltage of 6 Vdc. A built-in resistor with a value of 2.2 kΩ is part of the bias network.
This transistor is housed in a compact SOT-1123 surface mount package, making it suitable for applications where space is limited. The NSBC123TF3T5G is specified with a power rating of 254 mW.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSBC123TF3T5G is 50 Vdc.
The continuous collector current (IC) rating for this transistor is 100 mAdc.
The NSBC123TF3T5G is supplied in a SOT-1123 package.
The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V collector-emitter voltage.
The transistor includes a 2.2 kΩ resistor as part of its bias network.