DistyParts Icon
NSBC123TDP6T5G The ON Semiconductor NSBC123TDP6T5G is a dual NPN pre-biased transistor designed to replace a single device and its external resistor bias network. It offers simplified circuit design and reduced board space.
Mfr Part #:

NSBC123TDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC123TDP6T5G is a dual NPN pre-biased transistor designed to replace a single device and its external resistor bias network. It offers simplified circuit design and reduced board space.
✓ Total Stock: 7,650 pcs
$ Price Range: $0.99

NSBC123TDP6T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
7,650 pcs
On Request
7650 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSBC123TDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

NSBC123TDP6T5G Description

Short technical summary and product information.

The ON Semiconductor NSBC123TDP6T5G is a dual NPN Bias Resistor Transistor (BRT) in a SOT-963 package. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor (R1 = 2.2 kΩ) and a base-emitter resistor, eliminating the need for external components. This integration reduces system cost and board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The transistor type is 2 NPN - Pre-Biased (Dual), with a minimum DC current gain (hFE) of 160 at 5mA and 10V. The Vce saturation is a maximum of 250mV at 1mA and 10mA.

 

The device is designed for surface mount applications and comes in a SOT-963 package. It is Pb-Free and Halogen Free, complying with RoHS standards. The total device dissipation is rated at 339mW at 25°C with both junctions heated.

NSBC123TDP6T5G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Bipolar (BJT) - Arrays, Pre-Biased

NSBC123TDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC123TDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC123TDP6T5G Features

  • Dual NPN pre-biased transistor.
  • Integrated resistor network simplifies design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-963 surface mount package.

NSBC123TDP6T5G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal switching applications.
  • Reduces component count in designs.
  • Simplifies circuit board layout.

NSBC123TDP6T5G FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NSBC123TDP6T5G?

The maximum collector-emitter voltage is 50 Vdc.

What is the package type of the NSBC123TDP6T5G?

It is packaged in a SOT-963 surface mount package.

Is the NSBC123TDP6T5G RoHS compliant?

Yes, it is RoHS3 compliant.

Home
Account

Categories