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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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167,850 pcs
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167850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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The ON Semiconductor NSBC123JPDP6T5G is a dual NPN pre-biased transistor designed for simplified circuit design and reduced component count. This device integrates two NPN transistors with monolithic bias resistor networks, eliminating the need for external resistors.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. It also features a typical input resistance of 2.2 kΩ and a typical resistor ratio of 0.047.
This component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 339mW. It is supplied in a compact SOT-963 surface-mount package, suitable for applications where board space is limited. The device is RoHS3 compliant, MSL 1, and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50Vdc.
The continuous collector current is 100mAdc.
The minimum DC current gain (hFE) is 80 at 5mA and 10V.
The operating temperature range is from -55°C to +150°C.
It is supplied in a SOT-963 package.
Yes, it is RoHS3 Compliant.