NSBC123JPDP6T5G The NSBC123JPDP6T5G is a dual NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in a SOT-963 package.
Mfr Part #:

NSBC123JPDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSBC123JPDP6T5G is a dual NPN pre-biased transistor from ON Semiconductor. It features a 50V collector-emitter voltage and 100mA continuous collector current, housed in a SOT-963 package.
Total Stock: 167,850 pcs
$ Price Range: $0.99

NSBC123JPDP6T5G Available from 1 distributor

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NSBC123JPDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Input Voltage (Maximum)
Lead Spacing
Mounting Type
Operating Temperature (Minimum/Maximum)
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Typical Input Resistor
Typical Resistor Ratio
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBC123JPDP6T5G Description

Short technical summary and product information.

The ON Semiconductor NSBC123JPDP6T5G is a dual NPN pre-biased transistor designed for simplified circuit design and reduced component count. This device integrates two NPN transistors with monolithic bias resistor networks, eliminating the need for external resistors.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. It also features a typical input resistance of 2.2 kΩ and a typical resistor ratio of 0.047.

 

This component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 339mW. It is supplied in a compact SOT-963 surface-mount package, suitable for applications where board space is limited. The device is RoHS3 compliant, MSL 1, and REACH unaffected.

NSBC123JPDP6T5G Quick Information

Product Type: Transistor
Series: NSBC123JPDP6
Canonical Name: Dual NPN Pre-Biased Transistor
Subcategory: Pre-Biased Transistor Array

NSBC123JPDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSBC123JPDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC123JPDP6T5G Features

  • Dual NPN pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 2.2 kΩ input resistor.
  • Compact SOT-963 surface-mount package.

NSBC123JPDP6T5G Applications

  • Ideal for digital logic circuits.
  • Suitable for switching applications.
  • Reduces component count in designs.
  • Space-saving SOT-963 package.

NSBC123JPDP6T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBC123JPDP6T5G?

The maximum collector-emitter voltage is 50Vdc.

What is the continuous collector current rating?

The continuous collector current is 100mAdc.

What is the minimum DC current gain (hFE) for this transistor?

The minimum DC current gain (hFE) is 80 at 5mA and 10V.

What is the operating temperature range?

The operating temperature range is from -55°C to +150°C.

What package type is the NSBC123JPDP6T5G supplied in?

It is supplied in a SOT-963 package.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

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