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NSBC123JDXV6T1G The ON Semiconductor NSBC123JDXV6T1G is a Dual NPN Pre-Biased Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBC123JDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC123JDXV6T1G is a Dual NPN Pre-Biased Transistor. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 31,785 pcs
$ Price Range: $0.99

NSBC123JDXV6T1G Available from 1 distributor

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31,785 pcs
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NSBC123JDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBC123JDXV6T1G Description

Short technical summary and product information.

The ON Semiconductor NSBC123JDXV6T1G is a Dual NPN Bias Resistor Transistor (BRT) designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device eliminates the need for external resistors, reducing component count and board space.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. It has a minimum DC current gain (hFE) of 80 at 5mA and 10V, and a Vce saturation of 250mV maximum at 300µA and 10mA. The integrated base-emitter resistor has a nominal value of 47kΩ.

 

This transistor is housed in a SOT-563 surface mount package. It is designed for applications requiring simplified circuitry and reduced component count. The device is also noted as being Pb-Free and Halogen Free.

 

Maximum ratings include a collector-base voltage (VCBO) of 50Vdc, an input forward voltage (VIN(fwd)) of 12Vdc, and an input reverse voltage (VIN(rev)) of 5Vdc. The power dissipation is rated at 500mW at 25°C ambient temperature.

NSBC123JDXV6T1G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased Transistor Array

NSBC123JDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSBC123JDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC123JDXV6T1G Features

  • Dual NPN pre-biased transistor.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 47kΩ base resistor.
  • Surface mount SOT-563 package.

NSBC123JDXV6T1G Applications

  • Simplifies circuit designs.
  • Reduces component count.
  • Saves valuable board space.
  • Suitable for digital logic applications.
  • Used in integrated bias networks.

NSBC123JDXV6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBC123JDXV6T1G?

The maximum collector-emitter voltage (VCEO) for the NSBC123JDXV6T1G is 50Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating is 100mAdc.

What is the package type for this transistor?

This transistor is supplied in a SOT-563 surface mount package.

What is the integrated resistor value?

The integrated base-emitter resistor has a nominal value of 47kΩ.

What is the power dissipation at 25°C?

The power dissipation is 500mW at 25°C ambient temperature for one junction heated.

Is this component RoHS compliant?

Yes, this component is RoHS3 Compliant.

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