NSBC123EPDXV6T1G The NSBC123EPDXV6T1G is a dual NPN/PNP pre-biased transistor array from ON Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current, housed in a SOT-563 package.
Mfr Part #:

NSBC123EPDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSBC123EPDXV6T1G is a dual NPN/PNP pre-biased transistor array from ON Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current, housed in a SOT-563 package.
✓ Total Stock: 96,000 pcs
$ Price Range: $0.99

NSBC123EPDXV6T1G Available from 1 distributor

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✓ Non-Authorised
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NSBC123EPDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBC123EPDXV6T1G Description

Short technical summary and product information.

This pre-biased transistor array from ON Semiconductor integrates two transistors (one NPN, one PNP) with monolithic bias resistors into a single SOT-563 package. This design simplifies circuit construction and reduces board space by eliminating external bias components.

 

The NSBC123EPDXV6T1G features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It includes integrated resistors with a typical value of 2.2kΩ. The device operates within a temperature range of -55°C to +150°C.

 

Designed for ease of use, this component is suitable for applications where simplified digital logic or signal level shifting is required. Its surface mount SOT-563 package is ideal for compact electronic designs.

NSBC123EPDXV6T1G Quick Information

Product Type: Pre-Biased Transistor Array
Series: NSBC123EPDXV6
Canonical Name: Dual NPN/PNP Pre-Biased Transistor
Subcategory: Transistors

NSBC123EPDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC123EPDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC123EPDXV6T1G Features

  • Dual NPN/PNP pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 2.2kΩ resistors.
  • Compact SOT-563 surface mount package.

NSBC123EPDXV6T1G Applications

  • Simplifies digital logic circuits.
  • Reduces component count.
  • Ideal for space-constrained designs.
  • Used in signal level shifting.

NSBC123EPDXV6T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBC123EPDXV6T1G?

The maximum collector-emitter voltage is 50V.

What is the continuous collector current rating?

The continuous collector current is 100mA.

What is the typical resistance value of the integrated resistors?

The typical resistance value is 2.2kΩ.

What is the operating temperature range for this transistor array?

The operating temperature range is -55°C to +150°C.

What package type is the NSBC123EPDXV6T1G supplied in?

It is supplied in a SOT-563 package.

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