NSBC115TF3T5G The ON Semiconductor NSBC115TF3T5G is an NPN pre-biased bipolar junction transistor designed for surface mount applications. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBC115TF3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC115TF3T5G is an NPN pre-biased bipolar junction transistor designed for surface mount applications. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 312,000 pcs
$ Price Range: $0.99

NSBC115TF3T5G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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312,000 pcs
312000 pcs On Request 1 On Request On Request On Request On Request On Request

NSBC115TF3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBC115TF3T5G Description

Short technical summary and product information.

This NPN pre-biased transistor from ON Semiconductor, part number NSBC115TF3T5G, is designed to simplify circuit design by integrating a transistor with a monolithic bias network. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA, with a maximum power dissipation of 254mW.

 

The device is housed in a compact SOT-1123 surface mount package, making it suitable for space-constrained applications. It includes a base-emitter resistor of 100 kΩ. The transistor type is NPN pre-biased, and it has a DC current gain (hFE) of at least 160 at 5mA collector current and 10V collector-emitter voltage. The Vce saturation is a maximum of 250mV at 5mA base current and 10mA collector current.

 

This series of digital transistors is designed to replace a single device and its external resistor bias network, reducing component count and board space. The NSBC115TF3T5G is Pb-Free and Halogen Free, and is RoHS3 Compliant. It is supplied in tape and reel packaging with a standard package quantity of 8000 units.

NSBC115TF3T5G Quick Information

Product Type: NPN Pre-Biased Transistor
Canonical Name: NPN Pre-Biased Transistor
Subcategory: Pre-Biased Bipolar Junction Transistor (BJT)

NSBC115TF3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC115TF3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC115TF3T5G Features

  • NPN pre-biased transistor simplifies circuit design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-1123 surface mount package.
  • Pb-Free and Halogen Free compliant.

NSBC115TF3T5G Applications

  • Ideal for digital logic circuits.
  • Suitable for space-constrained designs.
  • Used in general switching applications.
  • Reduces component count on PCBs.

NSBC115TF3T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSBC115TF3T5G?

The collector-emitter voltage (VCEO) for the NSBC115TF3T5G is 50 Vdc.

What is the continuous collector current of the NSBC115TF3T5G?

The continuous collector current (IC) for the NSBC115TF3T5G is 100 mAdc.

What package type is the NSBC115TF3T5G available in?

The NSBC115TF3T5G is available in the SOT-1123 package.

What is the power dissipation rating for the NSBC115TF3T5G?

The maximum power dissipation for the NSBC115TF3T5G is 254 mW.

What is the base-emitter resistor value in the NSBC115TF3T5G?

The base-emitter resistor (R2) in the NSBC115TF3T5G is 100 kΩ.

Is the NSBC115TF3T5G RoHS compliant?

The NSBC115TF3T5G is RoHS3 Compliant.

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