NSBC115TDP6T5G The NSBC115TDP6T5G is a dual NPN pre-biased bipolar transistor from On Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current, housed in a compact SOT-963 package.
Mfr Part #:

NSBC115TDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSBC115TDP6T5G is a dual NPN pre-biased bipolar transistor from On Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous collector current, housed in a compact SOT-963 package.
✓ Total Stock: 224,000 pcs
$ Price Range: $0.99

NSBC115TDP6T5G Available from 1 distributor

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NSBC115TDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBC115TDP6T5G Description

Short technical summary and product information.

The NSBC115TDP6T5G is a dual NPN pre-biased transistor designed by On Semiconductor. This device integrates a single transistor with a monolithic bias network, simplifying circuit design and reducing board space. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA.

 

The transistor is housed in a SOT-963 surface mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 5mA and 10V, and a maximum Vce saturation of 250mV at 5mA and 10mA. The input forward voltage is rated at 40Vdc, and the input reverse voltage is 6Vdc.

 

This series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT eliminates individual components by integrating them into a single device, which can reduce both system cost and board space. The device is Pb-free and Halogen free, and RoHS compliant.

 

With a power dissipation of 408mW at 25°C and an operating temperature range of -55°C to 150°C, the NSBC115TDP6T5G is suitable for various electronic applications requiring integrated bias resistors.

NSBC115TDP6T5G Quick Information

Product Type: Pre-Biased / Digital Bipolar Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased / Digital

NSBC115TDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC115TDP6T5G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC115TDP6T5G Features

  • Dual NPN pre-biased transistor.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-963 surface mount package.
  • RoHS3 compliant and Halogen free.

NSBC115TDP6T5G Applications

  • Ideal for digital logic circuits.
  • Simplifies circuit design and reduces component count.
  • Suitable for space-constrained applications.
  • Used in general electronic assemblies.

NSBC115TDP6T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBC115TDP6T5G?

The maximum collector-emitter voltage (VCEO) for the NSBC115TDP6T5G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the NSBC115TDP6T5G is 100 mAdc.

What is the package type for this transistor?

The NSBC115TDP6T5G is supplied in a SOT-963 package.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 160 at 5mA collector current and 10V collector-emitter voltage.

What is the maximum operating temperature?

The maximum operating temperature for the NSBC115TDP6T5G is 150°C.

Is the NSBC115TDP6T5G RoHS compliant?

Yes, the NSBC115TDP6T5G is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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