NSBC115EDXV6T1G The ON Semiconductor NSBC115EDXV6T1G is a dual NPN pre-biased transistor designed to simplify circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBC115EDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC115EDXV6T1G is a dual NPN pre-biased transistor designed to simplify circuit design. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 248,000 pcs
$ Price Range: $0.99

NSBC115EDXV6T1G Available from 1 distributor

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✓ Non-Authorised
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248,000 pcs
248000 pcs On Request 1 On Request On Request On Request On Request On Request

NSBC115EDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBC115EDXV6T1G Description

Short technical summary and product information.

The ON Semiconductor NSBC115EDXV6T1G is a dual NPN pre-biased transistor, also known as a Bias Resistor Transistor (BRT). This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, eliminating the need for external components. This integration reduces system cost and board space.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. It has a maximum input forward voltage of 40Vdc and a maximum input reverse voltage of 10Vdc. The DC current gain (hFE) is a minimum of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.

 

The transistor features integrated resistors with a nominal value of 100kΩ. The device is supplied in a SOT-563 surface mount package. The power dissipation is rated at 500mW at 25°C ambient temperature for one junction heated.

 

This series is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is suitable for applications requiring simplified circuit design and reduced component count.

NSBC115EDXV6T1G Quick Information

Product Type: Transistor
Canonical Name: Dual NPN Bias Resistor Transistor
Subcategory: Pre-Biased Transistor Arrays

NSBC115EDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSBC115EDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC115EDXV6T1G Features

  • Dual NPN pre-biased transistor design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 100kΩ bias resistors.
  • Compact SOT-563 surface mount package.

NSBC115EDXV6T1G Applications

  • Simplifies circuit design and reduces component count.
  • Ideal for space-constrained applications.
  • Suitable for signal conditioning circuits.
  • Used in digital logic interfaces.

NSBC115EDXV6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSBC115EDXV6T1G?

The collector-emitter voltage (VCEO) for the NSBC115EDXV6T1G is 50 Vdc.

What is the continuous collector current of the NSBC115EDXV6T1G?

The continuous collector current (IC) for the NSBC115EDXV6T1G is 100 mAdc.

What is the resistance value of the integrated bias resistors?

The integrated bias resistors in the NSBC115EDXV6T1G have a nominal value of 100 kΩ.

What package type is the NSBC115EDXV6T1G supplied in?

The NSBC115EDXV6T1G is supplied in a SOT-563 package.

How is the NSBC115EDXV6T1G mounted?

The NSBC115EDXV6T1G is a surface mount device.

What is the standard package quantity for the NSBC115EDXV6T1G?

The standard package quantity for the NSBC115EDXV6T1G is 3,000 units on a tape and reel.

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