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NSBC114YPDXV6T5G The ON Semiconductor NSBC114YPDXV6T5G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It offers a 50V collector-emitter voltage and 100mA collector current.
Mfr Part #:

NSBC114YPDXV6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC114YPDXV6T5G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It offers a 50V collector-emitter voltage and 100mA collector current.
✓ Total Stock: 80,000 pcs
$ Price Range: $0.99

NSBC114YPDXV6T5G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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80,000 pcs
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80000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSBC114YPDXV6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBC114YPDXV6T5G Description

Short technical summary and product information.

This NSBC114YPDXV6T5G from ON Semiconductor is a complementary bias resistor transistor (BRT) designed to simplify circuit design by integrating a single transistor with a monolithic bias network. It contains one NPN and one PNP transistor, each with internal bias resistors (R1 = 10 kΩ, R2 = 47 kΩ).

 

The device is rated for a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It has a power dissipation of 500mW and comes in a compact SOT-563 surface mount package. The integrated bias network reduces component count and board space, making it suitable for various digital applications.

 

Key electrical characteristics include a Vce saturation of 250mV at 300µA/10mA and a minimum DC current gain (hFE) of 80 at 5mA/10V. The transistor array is Pb-free, Halogen Free/BFR Free, and RoHS compliant, suitable for applications requiring environmental considerations.

NSBC114YPDXV6T5G Quick Information

Product Type: Transistor Array
Canonical Name: NPN/PNP Pre-Biased Transistor Array
Subcategory: Bipolar Transistor Arrays, Pre-Biased

NSBC114YPDXV6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NSBC114YPDXV6T5G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC114YPDXV6T5G Features

  • Integrated NPN and PNP transistors.
  • Internal bias resistors (10kΩ/47kΩ).
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-563 surface mount package.

NSBC114YPDXV6T5G Applications

  • Simplifies digital circuit designs.
  • Reduces component count and board space.
  • Suitable for integrated bias networks.
  • Used in applications requiring NPN/PNP pairs.

NSBC114YPDXV6T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the NSBC114YPDXV6T5G?

The collector-emitter voltage rating is 50V.

What is the continuous collector current for this transistor array?

The continuous collector current is 100mA.

What are the internal bias resistor values?

The internal bias resistors are R1 = 10kΩ and R2 = 47kΩ.

What is the package type for the NSBC114YPDXV6T5G?

The package type is SOT-563.

Is the NSBC114YPDXV6T5G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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