| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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464,000 pcs
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464000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSBC114TF3T5G is an NPN pre-biased bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. It offers a maximum collector current of 100 mA and a collector-emitter voltage of 50 V.
Key electrical characteristics include a minimum DC current gain (hFE) of 160 at 5mA and 10V, and a Vce saturation of 250mV at 1mA collector current and 10mA base current. The transistor has a typical power dissipation of 254 mW and includes a 10 kΩ base resistor.
This component is supplied in a surface-mount SOT-1123 package, making it suitable for space-constrained applications. The NSBC114TF3T5G is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the NSBC114TF3T5G is 100 mA.
The collector-emitter voltage rating for the NSBC114TF3T5G is 50 V.
The minimum DC current gain (hFE) for the NSBC114TF3T5G is 160 at 5mA collector current and 10V collector-emitter voltage.
The NSBC114TF3T5G is supplied in a SOT-1123 package.
The NSBC114TF3T5G is RoHS3 Compliant.