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NSBC114EPDXV6T1G The ON Semiconductor NSBC114EPDXV6T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It is designed to simplify circuit design and reduce board space.
Mfr Part #:

NSBC114EPDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC114EPDXV6T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor. It is designed to simplify circuit design and reduce board space.
✓ Total Stock: 36,100 pcs
$ Price Range: $0.13

NSBC114EPDXV6T1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
36,100 pcs
On Request
36100 pcs On Request 1 On Request On Request 2015 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSBC114EPDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBC114EPDXV6T1G Description

Short technical summary and product information.

The ON Semiconductor NSBC114EPDXV6T1G is a complementary bias resistor transistor (BRT) designed to replace a single device and its external resistor bias network. This integrated solution contains a single transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, thereby reducing system cost and board space.

 

This device offers a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It features a nominal resistance value of 10kΩ for both R1 and R2. The DC current gain (hFE) is a minimum of 35 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current.

 

The NSBC114EPDXV6T1G is supplied in a SOT-563 surface mount package. It is Pb-free and halogen-free, complying with RoHS standards. This component is suitable for applications requiring simplified circuitry and reduced component count.

NSBC114EPDXV6T1G Quick Information

Product Type: Bipolar Transistor Array, Pre-Biased
Canonical Name: NPN and PNP Transistors with Monolithic Bias Resistor Network
Subcategory: Pre-Biased

NSBC114EPDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC114EPDXV6T1G Estimated Pricing

Qty Low High
1+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC114EPDXV6T1G Features

  • Integrated NPN and PNP transistors.
  • Monolithic bias resistor network included.
  • Simplifies circuit design and reduces board space.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current.

NSBC114EPDXV6T1G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal switching applications.
  • Reduces component count in designs.
  • Used in space-constrained applications.

NSBC114EPDXV6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the NSBC114EPDXV6T1G?

The collector-emitter voltage (VCEO) for the NSBC114EPDXV6T1G is 50 Vdc.

What is the continuous collector current for this transistor array?

The continuous collector current (IC) for the NSBC114EPDXV6T1G is 100 mAdc.

What is the package type for the NSBC114EPDXV6T1G?

The NSBC114EPDXV6T1G is supplied in a SOT-563 package.

What are the bias resistor values in the NSBC114EPDXV6T1G?

The NSBC114EPDXV6T1G has bias resistors R1 and R2, each with a nominal value of 10 kΩ.

What is the minimum DC current gain (hFE) for the NSBC114EPDXV6T1G?

The minimum DC current gain (hFE) is 35 at a collector current of 5mA and a collector-emitter voltage of 10V.

Is the NSBC114EPDXV6T1G RoHS compliant?

Yes, the NSBC114EPDXV6T1G is RoHS3 compliant.

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