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NSBC114EPDP6T5G The ON Semiconductor NSBC114EPDP6T5G is a dual NPN/PNP pre-biased transistor array designed for simplified circuit design and reduced board space. It operates at up to 50V with a 100mA continuous collector current.
Mfr Part #:

NSBC114EPDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBC114EPDP6T5G is a dual NPN/PNP pre-biased transistor array designed for simplified circuit design and reduced board space. It operates at up to 50V with a 100mA continuous collector current.
✓ Total Stock: 2,918 pcs
$ Price Range: $0.99

NSBC114EPDP6T5G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,918 pcs
On Request
2918 pcs On Request 1 On Request On Request 24+ On Request On Request
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NSBC114EPDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Input Voltage
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBC114EPDP6T5G Description

Short technical summary and product information.

The ON Semiconductor NSBC114EPDP6T5G is a complementary bias resistor transistor (BRT) featuring a monolithic bias network integrated into a single device. This design replaces a single transistor and its external resistor bias network, reducing component count and board space. It contains one NPN and one PNP transistor, both pre-biased.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device has a typical input resistance (R1) of 10kΩ. The Vce saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current. The DC current gain (hFE) is a minimum of 35 at 5mA collector current and 10V collector-emitter voltage.

 

This transistor array is housed in a compact SOT-963 surface mount package. It is suitable for applications requiring simplified circuit design and component reduction. The device is Pb-free and Halogen-free compliant.

NSBC114EPDP6T5G Quick Information

Product Type: Transistor
Series: NSBC114EPDP6
Canonical Name: NPN/PNP Pre-Biased Transistor Array
Subcategory: Transistors Switching - Resistor Biased

NSBC114EPDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC114EPDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC114EPDP6T5G Features

  • Dual NPN/PNP pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 10kΩ input resistor.
  • Compact SOT-963 surface mount package.

NSBC114EPDP6T5G Applications

  • Simplifies digital circuit designs.
  • Reduces component count on PCBs.
  • Ideal for space-constrained applications.
  • Suitable for integrated logic functions.

NSBC114EPDP6T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NSBC114EPDP6T5G?

The collector-emitter voltage (VCEO) for the NSBC114EPDP6T5G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the NSBC114EPDP6T5G is 100 mAdc.

What is the typical input resistance of this transistor array?

The typical input resistance (R1) for the NSBC114EPDP6T5G is 10 kΩ.

What package type is the NSBC114EPDP6T5G supplied in?

The NSBC114EPDP6T5G is supplied in a SOT-963 package.

What is the RoHS status of the NSBC114EPDP6T5G?

The NSBC114EPDP6T5G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) for the NSBC114EPDP6T5G is 1.

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