| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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328,000 pcs
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328000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NSBC114EF3T5G is a digital transistor featuring a monolithic bias resistor network, designed to replace discrete components and reduce system cost and board space. It is an NPN type transistor with a pre-biased configuration.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It also has a maximum input forward voltage of 40 Vdc and a maximum input reverse voltage of 10 Vdc. The device offers a typical DC current gain (hFE) of 35 at 5mA/10V and a Vce saturation of 250mV at 300µA/10mA. A typical input resistor value of 10 kΩ is integrated into the device.
This transistor is housed in a compact SOT-1123 surface mount package, making it suitable for applications where space is a constraint. The power dissipation is rated at 254 mW.
The NSBC114EF3T5G is part of a series designed to simplify circuit design and reduce component count. It is suitable for various digital applications requiring integrated biasing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSBC114EF3T5G is 50 Vdc.
The continuous collector current (IC) rating for the NSBC114EF3T5G is 100 mAdc.
The NSBC114EF3T5G is an NPN pre-biased transistor.
The typical input resistor value for the NSBC114EF3T5G is 10 kΩ.
The NSBC114EF3T5G is supplied in a SOT-1123 package.