| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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144,000 pcs
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144000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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The ON Semiconductor NSBC114EDP6T5G is a dual NPN bias resistor transistor (BRT) housed in a SOT-963 package. This integrated device replaces a single transistor and its external bias resistor network, simplifying circuit design and reducing component count and board space. It features a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc.
The transistor includes an integrated monolithic bias network with a typical input resistance of 10kΩ. The DC current gain (hFE) is a minimum of 35 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.
Designed for surface mount applications, the NSBC114EDP6T5G operates within a wide temperature range. It is Pb-free and Halogen-free, complying with RoHS standards. The device is AEC-Q101 qualified, making it suitable for automotive and other demanding applications requiring unique site and control change requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
The continuous collector current (IC) is 100 mAdc.
The typical input resistance (R1) is 10 kΩ.
The NSBC114EDP6T5G is supplied in a SOT-963 package.
Yes, the NSBC114EDP6T5G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.