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NSBC113EPDXV6T1G The On Semiconductor NSBC113EPDXV6T1G is a pre-biased transistor array featuring both NPN and PNP transistors with integrated resistors. It is supplied in a compact SOT-563 package.
Mfr Part #:

NSBC113EPDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSBC113EPDXV6T1G is a pre-biased transistor array featuring both NPN and PNP transistors with integrated resistors. It is supplied in a compact SOT-563 package.
✓ Total Stock: 108,000 pcs
$ Price Range: $0.99

NSBC113EPDXV6T1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
108,000 pcs
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NSBC113EPDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBC113EPDXV6T1G Description

Short technical summary and product information.

This pre-biased transistor array from On Semiconductor integrates NPN and PNP transistors with monolithic bias resistor networks, simplifying circuit design and reducing board space. The NSBC113EPDXV6T1G offers a collector-emitter voltage of up to 50V and a continuous collector current of 100mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 3 at 5mA/10V and a Vce saturation of 250mV at 5mA/10mA. The integrated resistors have a value of 1kOhm. The device is rated for 500mW power dissipation and operates within a junction and storage temperature range of -55 to +150°C.

 

Packaged in a surface-mount SOT-563 (or SOT-666) case, this component is designed for applications requiring simplified bias circuitry. It is Pb-Free and Halogen Free, with a RoHS3 compliant status.

NSBC113EPDXV6T1G Quick Information

Product Type: Pre-Biased Transistor Array
Canonical Name: NPN and PNP Transistors with Monolithic Bias Resistor Network
Subcategory: Pre-Biased Bipolar Transistor

NSBC113EPDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBC113EPDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBC113EPDXV6T1G Features

  • Dual NPN/PNP pre-biased transistor array.
  • Integrated 1kOhm bias resistors.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-563 package.

NSBC113EPDXV6T1G Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Saves valuable board space.
  • Suitable for digital logic circuits.
  • Ideal for bias network integration.

NSBC113EPDXV6T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBC113EPDXV6T1G?

The maximum collector-emitter voltage (VCEO) is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) is 100 mAdc.

What is the resistance value of the integrated resistors?

The integrated resistors have a value of 1kOhm.

What package type is the NSBC113EPDXV6T1G supplied in?

It is supplied in a SOT-563 package.

What is the operating temperature range?

The junction and storage temperature range is -55 to +150 °C.

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