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NSBA144WDP6T5G The ON Semiconductor NSBA144WDP6T5G is a dual PNP pre-biased transistor array in a SOT-963 package. It offers a collector current of 100mA and a collector-emitter voltage of 50V.
Mfr Part #:

NSBA144WDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBA144WDP6T5G is a dual PNP pre-biased transistor array in a SOT-963 package. It offers a collector current of 100mA and a collector-emitter voltage of 50V.
✓ Total Stock: 72,000 pcs
$ Price Range: $0.99

NSBA144WDP6T5G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
72,000 pcs
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NSBA144WDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBA144WDP6T5G Description

Short technical summary and product information.

The ON Semiconductor NSBA144WDP6T5G is a dual PNP pre-biased transistor array designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, eliminating the need for external resistors.

 

Key electrical specifications include a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V. The transistor features a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV at 300µA and 10mA. It includes integrated base and emitter-base resistors, specified at 10kΩ and 47kΩ respectively.

 

The device is housed in a compact SOT-963 surface mount package, making it suitable for space-constrained applications. The maximum power dissipation is rated at 408mW. The NSBA144WDP6T5G is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

This pre-biased transistor array is ideal for applications requiring simplified digital logic implementation and reduced component count. Its integrated nature contributes to lower system costs and improved board layout efficiency.

NSBA144WDP6T5G Quick Information

Product Type: Transistor Array
Canonical Name: Dual PNP Pre-Biased Transistor Array
Subcategory: Arrays, Pre-Biased

NSBA144WDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBA144WDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBA144WDP6T5G Features

  • Dual PNP pre-biased transistor array.
  • Integrated bias resistor network.
  • 100mA maximum collector current.
  • 50V collector-emitter breakdown voltage.
  • Compact SOT-963 surface mount package.

NSBA144WDP6T5G Applications

  • Simplifies digital logic circuits.
  • Reduces component count.
  • Enables smaller PCB designs.
  • Suitable for space-constrained applications.

NSBA144WDP6T5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the NSBA144WDP6T5G?

The maximum continuous collector current is 100 mAdc.

What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 50 Vdc.

What is the package type for this transistor array?

The transistor array is supplied in a SOT-963 package.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.

What are the integrated resistor values?

The integrated resistors are R1 = 10kΩ and R2 = 47kΩ.

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