| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
151,900 pcs
|
151900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The NSBA144EDXV6T5G is a dual PNP silicon transistor with an integrated monolithic bias resistor network. This design simplifies circuit construction by replacing discrete resistors and transistors, reducing component count and board space. It is suitable for low-power surface mount applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 100mA. The device has a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA.
This transistor is supplied in a SOT-563 surface mount package, making it ideal for applications where board space is limited. The integrated resistors have a value of 47kOhm for both R1 and R2.
Thermal characteristics include a total device dissipation (PD) of 357mW at 25°C when one junction is heated, and 500mW when both junctions are heated. The junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50Vdc.
The maximum collector current (IC) is 100mAdc.
The NSBA144EDXV6T5G is supplied in a SOT-563 package.
The integrated resistors R1 and R2 both have a value of 47kOhm.
The minimum DC current gain (hFE) is 80 at 5mA and 10V.