| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,808 pcs
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7808 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The ON Semiconductor NSBA144EDXV6T1G is a dual PNP pre-biased bipolar transistor designed to simplify circuit design and reduce board space. This device integrates two PNP transistors with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The saturation voltage is a maximum of 250mV at 300µA, 10mA. The device features a maximum power dissipation of 500mW. Resistor values are specified as 10kΩ for both R1 (base) and R2 (emitter-base) according to manufacturer data, though datasheet indicates 47kΩ.
This transistor is housed in a compact SOT-563 surface-mount package, making it suitable for space-constrained applications. It is Pb-free and halogen-free, complying with RoHS standards. The device is also REACH unaffected and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
It is supplied in a SOT-563, SOT-666 package.
The maximum power dissipation is 500mW.
The integrated bias resistor values are 10kΩ for R1 and 10kΩ for R2.