| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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143,850 pcs
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143850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NSBA143ZDP6T5G is a dual PNP pre-biased bipolar transistor designed for simplified circuit design and reduced component count. This device integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.
Key electrical characteristics include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The transistor exhibits a Vce saturation of 250mV at 1mA and 10mA, with a minimum DC current gain (hFE) of 80 at 5mA and 10V. It also features internal base and emitter base resistors of 10kΩ and 47kΩ, respectively. The maximum power dissipation is rated at 408mW.
This component is housed in a compact SOT-963 surface mount package, making it suitable for space-constrained applications. The NSBA143ZDP6T5G is designed to replace a single device and its external resistor bias network, contributing to reduced system cost and board space.
Environmental compliance includes RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status. The device is supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 408mW at TA = 25°C.
The Vce saturation is 250mV at 1mA and 10mA.
The minimum DC current gain (hFE) is 80 at 5mA and 10V.
The device has an internal base resistor (R1) of 10 kΩ and an emitter base resistor (R2) of 47 kΩ.
The NSBA143ZDP6T5G is supplied in a SOT-963 surface mount package.