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NSBA143TF3T5G The On Semiconductor NSBA143TF3T5G is a PNP pre-biased transistor with a 50V collector-emitter voltage rating and 100mA continuous current capability. It is supplied in a SOT-1123 package.
Mfr Part #:

NSBA143TF3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSBA143TF3T5G is a PNP pre-biased transistor with a 50V collector-emitter voltage rating and 100mA continuous current capability. It is supplied in a SOT-1123 package.
✓ Total Stock: 144,000 pcs
$ Price Range: $0.99

NSBA143TF3T5G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
144,000 pcs
On Request
144000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSBA143TF3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBA143TF3T5G Description

Short technical summary and product information.

The On Semiconductor NSBA143TF3T5G is a PNP pre-biased bipolar junction transistor (BJT) designed for simplified circuit applications. It integrates a transistor with a monolithic bias resistor network, reducing component count and board space.

 

This device features a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (VCE(sat)) is a maximum of 250mV at 1mA base current and 10mA collector current. A built-in resistor of 4.7 kΩ is included.

 

The transistor is housed in a SOT-1123 surface-mount package, making it suitable for compact electronic designs. The maximum power dissipation is 254 mW. It is Pb-Free and Halogen Free compliant.

NSBA143TF3T5G Quick Information

Product Type: PNP Pre-Biased Transistor
Canonical Name: On Semiconductor NSBA143TF3T5G PNP Pre-Biased Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

NSBA143TF3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBA143TF3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBA143TF3T5G Features

  • PNP pre-biased transistor design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 4.7 kΩ bias resistor.
  • Compact SOT-1123 surface-mount package.

NSBA143TF3T5G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal switching applications.
  • Used in portable electronic devices.
  • Simplifies circuit board layouts.
  • Reduces overall component count.

NSBA143TF3T5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBA143TF3T5G?

The maximum collector-emitter voltage (VCEO) for the NSBA143TF3T5G is 50Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this transistor is 100mA.

What package type is the NSBA143TF3T5G supplied in?

The NSBA143TF3T5G is supplied in a SOT-1123 package.

What is the minimum DC current gain (hFE) for this transistor?

The minimum DC current gain (hFE) is 160 at a collector current of 5mA and collector-emitter voltage of 10V.

What is the integrated resistor value?

The integrated bias resistor value is 4.7 kΩ.

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