| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSBA124XDXV6T1G is a dual PNP pre-biased transistor array manufactured by ON Semiconductor. This device integrates two PNP transistors with monolithic bias resistor networks, simplifying circuit design and reducing board space. It features a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc.
The transistor array is supplied in a compact SOT-563 surface-mount package. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a Vce saturation of 250mV maximum at 1mA, 10mA. The device also includes a base-emitter resistor with a nominal value of 47kΩ.
Designed for ease of use, this pre-biased transistor array eliminates the need for external resistors. It is suitable for various digital applications where space and component count reduction are critical. The device operates within a junction and storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSBA124XDXV6T1G is 50 Vdc.
The continuous collector current (IC) rating for the NSBA124XDXV6T1G is 100 mAdc.
The NSBA124XDXV6T1G is supplied in a SOT-563 package.
The power dissipation (PD) rating for the NSBA124XDXV6T1G is 500mW at 25°C ambient temperature, for one junction heated.
The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.
The base-emitter resistor (R2) value is 47kΩ.
The junction and storage temperature range is -55°C to +150°C.