| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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152,000 pcs
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152000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSBA124EDP6T5G from ON Semiconductor is a dual PNP pre-biased bipolar transistor (BJT) array designed for simplified circuit design and reduced board space. This device integrates two PNP transistors with a monolithic bias resistor network, eliminating the need for external components.
Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The DC current gain (hFE) is a minimum of 60 at 5mA collector current and 10V Vce. It features a Vce saturation voltage of 250mV at 300µA base current and 10mA collector current. The integrated bias resistors are specified at 22kΩ.
This transistor array is supplied in a surface-mount SOT-963 package, measuring 1mm x 800μm x 370μm, making it suitable for space-constrained applications. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
This component is ideal for applications requiring simplified digital logic implementation or signal level shifting where a pre-biased transistor configuration is beneficial. Its integrated nature reduces component count and assembly costs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 408mW at 25°C.
The minimum DC current gain (hFE) is 60 at 5mA collector current and 10V Vce.
The Vce saturation voltage is 250mV at 300µA base current and 10mA collector current.
It is supplied in a SOT-963 package.
It is a surface mount device.