| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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136,000 pcs
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136000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NSBA123JDP6T5G is a dual PNP bias resistor transistor (BRT) designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device replaces external resistors, reducing component count and board space.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It features a minimum DC current gain (hFE) of 80 at 5mA and 10V, with a Vce saturation of 250mV at 300µA and 10mA. The integrated resistors are R1 at 10kΩ and R2 at 47kΩ.
This transistor array is housed in a compact SOT-963 surface mount package, making it suitable for space-constrained applications. The device is designed for ease of use and cost-effectiveness in various digital and analog circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The continuous collector current is 100mA.
The integrated resistors are R1 at 10kΩ and R2 at 47kΩ.
It is supplied in a SOT-963 package.
The Moisture Sensitivity Level is 1 Unlimited.