| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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32,000 pcs
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32000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Power Dissipation (Max) | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor NSBA115EDXV6T1G is a dual PNP bias resistor transistor designed to simplify circuit design by integrating a single transistor with a monolithic bias network. This device eliminates the need for external resistors, reducing system cost and board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The transistor type is 2 PNP - Pre-Biased (Dual), with a typical DC current gain (hFE) of 80 @ 5mA, 10V. The saturation voltage (Vce Sat) is a maximum of 250mV @ 300µA, 10mA. It also features a typical input resistor (R1) of 100kΩ.
This component is housed in a SOT-563 surface mount package. It operates within a temperature range of -55°C to +150°C. The device is Pb-free and Halogen-free, complying with RoHS3 standards.
The NSBA115EDXV6T1G is suitable for applications where reduced component count and board space are critical. Its integrated resistor network simplifies the design of digital logic interfaces.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50 Vdc.
The continuous collector current (IC) is 100 mAdc.
The device is supplied in a SOT-563 package.
The junction and storage temperature range is -55°C to +150°C.
Yes, the RoHS Status is RoHS3 Compliant.