| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
288,000 pcs
|
288000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSBA114YF3T5G from On Semiconductor is a PNP pre-biased transistor integrated with a monolithic bias resistor network. This design simplifies circuit construction, reduces board space, and lowers component count.
This device features a maximum collector-emitter voltage of 50Vdc and a continuous collector current of 100mAdc. It has a power dissipation rating of 254mW. The DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 250mV at 300µA base current and 10mA collector current.
The transistor includes a base-emitter resistor (R2) with a nominal value of 47 kΩ. The input forward voltage is rated up to 40Vdc, and the input reverse voltage is up to 6Vdc. The collector-base voltage is also rated at a maximum of 50Vdc.
Packaged in a SOT-1123 surface mount package, the NSBA114YF3T5G is suitable for various electronic designs requiring a pre-biased PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The power dissipation is 254 mW.
The minimum DC current gain (hFE) is 80 at 5mA collector current and 10V collector-emitter voltage.
The saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current.
The integrated base-emitter resistor (R2) has a nominal value of 47 kΩ.
The NSBA114YF3T5G is a PNP pre-biased transistor.
The NSBA114YF3T5G is supplied in a SOT-1123 package.
The NSBA114YF3T5G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The NSBA114YF3T5G is REACH Unaffected.