NSBA114YDP6T5G The ON Semiconductor NSBA114YDP6T5G is a dual PNP pre-biased bipolar transistor in a SOT-963 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBA114YDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSBA114YDP6T5G is a dual PNP pre-biased bipolar transistor in a SOT-963 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 136,000 pcs
$ Price Range: $0.99

NSBA114YDP6T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
136,000 pcs
136000 pcs On Request 1 On Request On Request On Request On Request On Request

NSBA114YDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSBA114YDP6T5G Description

Short technical summary and product information.

The ON Semiconductor NSBA114YDP6T5G is a dual PNP pre-biased transistor designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 47 kΩ).

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The saturation voltage (Vce) is a maximum of 250mV at 300µA/10mA, and the minimum DC current gain (hFE) is 80 at 5mA/10V. The maximum power dissipation is 408mW.

 

This transistor is housed in a compact SOT-963 surface mount package, making it suitable for space-constrained applications. It is also specified as Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

 

The NSBA114YDP6T5G is designed to replace individual transistors and external bias resistors, offering a cost-effective and space-saving solution for various electronic circuits.

NSBA114YDP6T5G Quick Information

Product Type: Dual PNP Bias Resistor Transistor
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Pre-Biased Transistor Arrays

NSBA114YDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NSBA114YDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBA114YDP6T5G Features

  • Dual PNP pre-biased transistor.
  • Integrated bias resistors (10kΩ, 47kΩ).
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-963 surface mount package.

NSBA114YDP6T5G Applications

  • Simplifies circuit design.
  • Reduces component count.
  • Saves valuable board space.
  • Suitable for space-constrained designs.

NSBA114YDP6T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBA114YDP6T5G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What is the package type for this transistor?

The transistor is supplied in a SOT-963 package.

What are the integrated resistor values?

The integrated resistors are R1 = 10 kΩ and R2 = 47 kΩ.

Is the NSBA114YDP6T5G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 (Unlimited).

Home
Account

Categories