| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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136,000 pcs
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136000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The ON Semiconductor NSBA114YDP6T5G is a dual PNP pre-biased transistor designed to simplify circuit design and reduce board space. This device integrates a single transistor with a monolithic bias network, consisting of a series base resistor (R1 = 10 kΩ) and a base-emitter resistor (R2 = 47 kΩ).
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The saturation voltage (Vce) is a maximum of 250mV at 300µA/10mA, and the minimum DC current gain (hFE) is 80 at 5mA/10V. The maximum power dissipation is 408mW.
This transistor is housed in a compact SOT-963 surface mount package, making it suitable for space-constrained applications. It is also specified as Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
The NSBA114YDP6T5G is designed to replace individual transistors and external bias resistors, offering a cost-effective and space-saving solution for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The transistor is supplied in a SOT-963 package.
The integrated resistors are R1 = 10 kΩ and R2 = 47 kΩ.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 (Unlimited).