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NSBA114TF3T5G The NSBA114TF3T5G is a PNP pre-biased transistor from ON Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous current in a surface mount SOT-1123 package.
Mfr Part #:

NSBA114TF3T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSBA114TF3T5G is a PNP pre-biased transistor from ON Semiconductor. It offers a 50V collector-emitter voltage and 100mA continuous current in a surface mount SOT-1123 package.
✓ Total Stock: 320,000 pcs
$ Price Range: $0.99

NSBA114TF3T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
320,000 pcs
On Request
320000 pcs On Request 1 On Request On Request On Request On Request On Request
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NSBA114TF3T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBA114TF3T5G Description

Short technical summary and product information.

The ON Semiconductor NSBA114TF3T5G is a PNP pre-biased transistor designed to simplify circuit design by integrating a transistor with a monolithic bias resistor network. This device replaces external components, reducing system cost and board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It features a DC current gain (hFE) of 160 minimum at 5mA and 10V, with a Vce saturation of 250mV maximum at 300µA and 10mA. The integrated bias resistors are R1 at 10 kΩ.

 

This transistor is housed in a compact SOT-1123 surface mount package, making it suitable for space-constrained applications. The device is Pb-Free and Halogen Free, complying with RoHS standards.

NSBA114TF3T5G Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: NSBA114TF3T5G PNP Pre-Biased Transistor
Subcategory: Pre-Biased Bipolar Junction Transistor (BJT)

NSBA114TF3T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBA114TF3T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBA114TF3T5G Features

  • PNP pre-biased transistor simplifies circuit design.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 10 kΩ base resistor (R1).
  • Compact SOT-1123 surface mount package.

NSBA114TF3T5G Applications

  • Ideal for digital logic circuits.
  • Suitable for switching applications.
  • Used in portable electronic devices.
  • Component count reduction in designs.

NSBA114TF3T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBA114TF3T5G?

The maximum collector-emitter voltage (Vceo) for the NSBA114TF3T5G is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current (Ic) rating for the NSBA114TF3T5G is 100 mAdc.

What package type is the NSBA114TF3T5G supplied in?

The NSBA114TF3T5G is supplied in a SOT-1123 package.

Is the NSBA114TF3T5G RoHS compliant?

Yes, the NSBA114TF3T5G is RoHS3 compliant.

What is the minimum DC current gain (hFE) for this transistor?

The minimum DC current gain (hFE) for the NSBA114TF3T5G is 160 at 5mA and 10V.

What is the Vce saturation voltage?

The Vce saturation voltage is 250mV maximum at 300µA base current and 10mA collector current.

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