| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,000 pcs
|
48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NSBA114TDXV6T5G from On Semiconductor is a dual PNP bias resistor transistor (BRT) designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device features a collector-emitter voltage of 50V and a continuous collector current of 100mA.
Key electrical characteristics include a maximum power dissipation of 500mW, a DC current gain (hFE) of 160 minimum at 5mA and 10V, and a Vce saturation of 250mV maximum at 1mA and 10mA. It includes integrated resistors with R1 and R2 values of 10kΩ.
The transistor is housed in a SOT-563 surface mount package, with a standard tape and reel quantity of 8000 units. This component is suitable for applications requiring reduced component count and board space, offering a simplified solution compared to discrete transistors and external resistors.
This device is Pb-Free and Halogen Free, complying with RoHS standards. It is supplied in a SOT-563 package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the NSBA114TDXV6T5G is 50 Vdc.
The continuous collector current (Ic) for the NSBA114TDXV6T5G is 100 mAdc.
The maximum power dissipation for the NSBA114TDXV6T5G is 500mW.
The NSBA114TDXV6T5G is supplied in a SOT-563 package.
The NSBA114TDXV6T5G has integrated bias resistors with R1 and R2 values of 10kΩ.