| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84,000 pcs
|
84000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor NSBA114TDXV6T1G is a Dual PNP Bias Resistor Transistor (BRT) designed to simplify circuit design by integrating a single transistor with a monolithic bias resistor network. This device replaces individual resistors, reducing board space and component count.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. It has a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a Vce saturation of 250mV at 1mA and 10mA. The integrated base resistor (R1) is 10kΩ.
This transistor is housed in a SOT-563 surface mount package. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The device is suitable for applications requiring simplified circuitry and reduced component footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The integrated base resistor (R1) is 10kΩ.
The device is supplied in a SOT-563 package.
Yes, the NSBA114TDXV6T1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.