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NSBA114TDP6T5G The On Semiconductor NSBA114TDP6T5G is a dual PNP pre-biased transistor array. It features a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBA114TDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSBA114TDP6T5G is a dual PNP pre-biased transistor array. It features a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 152,000 pcs
$ Price Range: $0.99

NSBA114TDP6T5G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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152,000 pcs
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NSBA114TDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSBA114TDP6T5G Description

Short technical summary and product information.

The NSBA114TDP6T5G from On Semiconductor is a dual PNP pre-biased bipolar transistor (BJT) array. This device integrates a single transistor with a monolithic bias resistor network, simplifying circuit design and reducing board space. It is designed to replace individual transistors and external bias resistors.

 

Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device has a nominal base resistor (R1) of 10kΩ. It offers a minimum DC current gain (hFE) of 160 at 5mA and 10V, with a maximum Vce saturation of 250mV at 1mA and 10mA.

 

This transistor array is housed in a compact SOT-963 surface-mount package, making it suitable for space-constrained applications. The device is Pb-Free and Halogen Free, complying with RoHS standards. Its integrated bias network simplifies implementation in various digital and analog circuits.

NSBA114TDP6T5G Quick Information

Product Type: Transistor Array, Pre-Biased
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Bipolar Transistor Arrays, Pre-Biased

NSBA114TDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBA114TDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBA114TDP6T5G Features

  • Dual PNP pre-biased transistor array.
  • 50V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Integrated 10kΩ base resistor.
  • Compact SOT-963 surface-mount package.

NSBA114TDP6T5G Applications

  • Simplifies circuit designs.
  • Reduces component count.
  • Saves valuable board space.
  • Suitable for digital logic circuits.
  • Used in bias resistor networks.

NSBA114TDP6T5G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the NSBA114TDP6T5G?

The maximum collector-emitter voltage is 50 Vdc.

What is the package type of the NSBA114TDP6T5G?

The package type is SOT-963.

What is the maximum collector current for this device?

The maximum collector current is 100 mAdc.

Is the NSBA114TDP6T5G RoHS compliant?

Yes, it is RoHS3 compliant.

Is the device Pb-Free?

Yes, the device is Pb-Free.

What is the maximum input forward voltage?

The maximum input forward voltage is 40 Vdc.

What is the maximum input reverse voltage?

The maximum input reverse voltage is 5 Vdc.

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