| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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304,000 pcs
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304000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NSBA114EF3T5G from ON Semiconductor is a PNP type digital transistor, also known as a Bias Resistor Transistor (BRT). This integrated device simplifies circuit design by incorporating a transistor with a monolithic bias network, consisting of a series base resistor and a base-emitter resistor, eliminating the need for external components. It is rated for a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc.
The transistor features a nominal internal bias resistor of 10 kΩ. It has a DC current gain (hFE) of 35 (min) at 5mA and 10V, and a Vce saturation of 250mV (max) at 300µA and 10mA. The device is designed for surface mounting and comes in a SOT-1123 package.
This series of digital transistors is designed to replace a single device and its external resistor bias network. The use of a BRT can reduce both system cost and board space. The NSBA114EF3T5G is RoHS3 compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The continuous collector current is 100 mAdc.
The NSBA114EF3T5G is supplied in a SOT-1123 package.
The internal bias resistor value is 10 kΩ.
The Moisture Sensitivity Level is 1 Unlimited.