DistyParts Icon
NSBA114EDP6T5G The On Semiconductor NSBA114EDP6T5G is a dual PNP pre-biased transistor array in a SOT-963 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

NSBA114EDP6T5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NSBA114EDP6T5G is a dual PNP pre-biased transistor array in a SOT-963 package. It offers a 50V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 144,000 pcs
$ Price Range: $0.99

NSBA114EDP6T5G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
144,000 pcs
On Request
144000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NSBA114EDP6T5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Lead Spacing
Mounting Type
Power
Resistor
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
View Similar Products (0)

NSBA114EDP6T5G Description

Short technical summary and product information.

The NSBA114EDP6T5G from On Semiconductor is a dual PNP bias resistor transistor (BRT) designed to simplify circuit design by integrating a transistor with a monolithic bias network. This device replaces external resistors, reducing component count and board space.

 

Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It features a DC current gain (hFE) of 35 (min) at 5mA, 10V, and a Vce saturation of 250mV (max) at 300µA, 10mA. The integrated resistors have a nominal value of 10kΩ.

 

This transistor array is housed in a compact SOT-963 surface-mount package. Thermal characteristics include a total device dissipation of up to 385mW (Both Junction Heated) at 25°C.

 

The device is Pb-Free and Halogen Free, compliant with RoHS3 standards. It is suitable for applications requiring reduced component count and board space.

NSBA114EDP6T5G Quick Information

Product Type: Transistor - Bipolar (BJT) - Arrays, Pre-Biased
Canonical Name: Dual PNP Bias Resistor Transistor
Subcategory: Arrays, Pre-Biased

NSBA114EDP6T5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSBA114EDP6T5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSBA114EDP6T5G Features

  • Dual PNP pre-biased transistor array
  • 50V collector-emitter voltage rating
  • 100mA continuous collector current
  • Integrated 10kΩ bias resistors
  • Compact SOT-963 surface-mount package

NSBA114EDP6T5G Applications

  • Simplifies circuit design and reduces component count
  • Ideal for space-constrained applications
  • Used in digital logic circuits
  • Provides stable input biasing

NSBA114EDP6T5G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSBA114EDP6T5G?

The maximum collector-emitter voltage is 50 Vdc.

What is the continuous collector current rating?

The continuous collector current is 100 mAdc.

What package type is the NSBA114EDP6T5G supplied in?

It is supplied in a SOT-963 package.

Is the NSBA114EDP6T5G RoHS compliant?

The device is RoHS3 Compliant.

What is the moisture sensitivity level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

What are the integrated resistor values?

The integrated bias resistors are 10kΩ.

Home
Account

Categories